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Possible values of lattice constant of silicene growth on substrate: Density functional calculation |
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| รหัสดีโอไอ | |
| Creator | Muhamad N. Manaf |
| Title | Possible values of lattice constant of silicene growth on substrate: Density functional calculation |
| Contributor | Feri F. Laksana, Rino Prihantoro, Muhammad Ikhsanudin, Irwan Novianto, Abdulloh Badruzzaman, Mochamad Syamsiro |
| Publisher | Khon Kaen University, Thailand |
| Publication Year | 2568 |
| Journal Title | Asia-Pacific Journal of Science and Technology |
| Journal Vol. | 30 |
| Journal No. | 2 |
| Page no. | 8 (11 pages) |
| Keyword | Monolayer, Silicon, Stability, Strain, Synthesized |
| URL Website | https://apst.kku.ac.th/ |
| Website title | https://apst.kku.ac.th/possible-values-of-lattice-constant-of-silicene-growth-on-substrate-density-functional-calculation/ |
| ISSN | 2539-6293 |
| Abstract | We conducted calculations using First-Principles based on Density Functional Theory to determine the stability of monolayer silicene. A quasi-freestanding of monolayer silicene was applied as a model during calculations. We investigated the total energy and the atomic configuration using various lattice constant. We analyzed that a monolayer of silicene in a freestanding state will never be synthesized. Silicene merely can be synthesized only on the top of the substrate. We found some possible values of the lattice constants of monolayer silicene on the substrate, especially in recent experiment which was silicene on the top of Au[111]. We also investigated the electronic structure of silicene using various lattice constant. We assumed that the strain engineering can be truly applied in silicene, and in all group IV monolayer. This opportunity opening the possibility of silicene for application of topological quantum computing. |
